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2SB860
Silicon PNP Triple Diffused
ADE-208-861 (Z) 1st. Edition September 2000 Application
Low frequency power amplifier TV vertical deflection output complementary pair with 2SD1137
Outline
TO-220AB
1
23
1. Base 2. Collector (Flange) 3. Emitter
Absolute Maximum Ratings (Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VE C O VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25C Tj Tstg
1
Rating -100 -100 -4 -4 -5 1.8 40 150 -45 to +150
Unit V V V A A W W C C
2SB860
Electrical Characteristics (Ta = 25C)
Item Symbol Min -100 -4 -- -- -- 50 25 Note: 1. Pulse test Typ -- -- -- -- -- -- -- Max -- -- -100 -50 -1.0 250 350 Unit V V A A V Test conditions I C = -10 mA, RBE = I E = -1 mA, IC = 0 VCE = -80 V, RBE = VEB = -3.5 V, IC = 0 I C = -1 A, IB = -0.1 A*1 VCE = -4 V I C = -0.5 A*1 I C = -50 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio V(BR)EBO I CEO I EBO VCE(sat) hFE
Maximum Collector Dissepation Curve 60 Collector power dissipaition PC (W) -10 ICmax Collector current IC (A) -3 -1.0 -0.3 -0.1
Area of Safe Operation (-10 V, -4 A) (-40 V, -1 A)
40
20
TC = 25C DC Operation (-100 V, -50 mA)
-0.03 -0.01 -1
0
50 100 Case temperature TC (C)
150
-3 -10 -30 -100 -300 -1,000 Collector to emitter voltage VCE (V)
2SB860
Typical Output Characteristics -1.0 TC = 25C 1,000 DC Current Transfer Ratio vs. Collector Current VCE = -5 V DC current transfer raito hFE 500 TC = 75C 25 -25
-10 -8
-6
Collector current IC (A)
-0.8
-0.6
200 100 50
-4
-0.4
IB = -2 mA
-0.2
20 10 -0.01 -0.03 -0.1 -0.3 -1.0 -3 Collector current IC (A)
0
-2 -4 -6 -8 -10 Collector to emitter voltage VCE (V)
-10
Collector to Emitter Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE(sat) (V) -10 -3 -1.0 -0.3 -0.1 -0.03 -0.01 -0.01 -0.03 -0.1 -0.3 -1.0 -3 Collector current IC (A) TC = 75C 25 -25 Base to emitter saturation voltage VBE(sat) (V) IC = 10 IB -1.5
Base to Emitter Saturation Voltage vs. Collector Current IC = 10 IB
-1.0
C -25 TC = 25 75
-0.5
-10
0 -0.01 -0.03 -0.1 -0.3 -1.0 -3 Collector current IC (A)
-10
2SB860
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Hitachi, Ltd.
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